Conducting Nanofilaments in Metal Oxide Resistive Switching Memory
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Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.
Resistance switching in metal oxides could form the basis for next-generation non-volatile memory. It has been argued that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only indirectly, limiting our understanding of the switching mechanism. Here, we use high-resolution...
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Resistive switching effect in conductor/insulator/conductor thin-film stacks is promising for resistance random access memory with high-density, fast speed, low power dissipation and high endurance, as well as novel computer logic architectures. NiO is a model system for the resistive switching effect and the formation/rupture of Ni nanofilaments is considered to be essential. However, it is no...
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